Superconducting spin valve effect in Co/Pb/Co heterostructures with insulating interlayers

• Andrey A. Kamashev,
• Nadir N. Garif’yanov,
• Aidar A. Validov,
• Vladislav Kataev,
• Alexander S. Osin,
• Yakov V. Fominov and
• Ilgiz A. Garifullin

Beilstein J. Nanotechnol. 2024, 15, 457–464, doi:10.3762/bjnano.15.41

• the magnetization of the Co1 layer. The layers were deposited using electron beam evaporation (Co, Pb) and AC sputtering (Si3N4). The deposition setup had a load-lock station with vacuum shutters, allowing one to transfer the sample holder without breaking the ultrahigh vacuum in the deposition

Sidewall angle tuning in focused electron beam-induced processing

• Sangeetha Hari,
• Willem F. van Dorp,
• Johannes J. L. Mulders,
• Piet H. F. Trompenaars,
• Pieter Kruit and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 447–456, doi:10.3762/bjnano.15.40

• ., Delftechpark 37j, 2628 XJ, Delft, Netherlands Thermo Fisher Scientific, Achtseweg Noord 5, 5651 GG Eindhoven, Netherlands 10.3762/bjnano.15.40 Abstract Structures fabricated using focused electron beam-induced deposition (FEBID) have sloped sidewalls because of the very nature of the deposition process. For

• applications this is highly undesirable, especially when neighboring structures are interconnected. A new technique combining FEBID and focused electron beam-induced etching (FEBIE) has been developed to fabricate structures with vertical sidewalls. The sidewalls of carbon FEBID structures have been modified

• ; FEBIP; side wall angle; Introduction Focused electron beam-induced processing (FEBIP) is a technique in which a focused electron beam is directed onto a substrate with an adsorbed layer of precursor molecules. The precursor molecules are supplied from a gas injection system through a nozzle at close

Heat-induced morphological changes in silver nanowires deposited on a patterned silicon substrate

• Elyad Damerchi,
• Sven Oras,
• Edgars Butanovs,
• Allar Liivlaid,
• Mikk Antsov,
• Boris Polyakov,
• Annamarija Trausa,
• Veronika Zadin,
• Andreas Kyritsakis,
• Loïc Vidal,
• Karine Mougin,
• Siim Pikker and
• Sergei Vlassov

Beilstein J. Nanotechnol. 2024, 15, 435–446, doi:10.3762/bjnano.15.39

• significant bending in the suspended part in the heating scheme 2. The onset temperature of this phenomenon is difficult to determine as the deformation can be below the detection limits of SEM. Moreover, in SEM we only see the 2D projection normal to the electron beam. If NWs are bent out of the substrate

Investigating ripple pattern formation and damage profiles in Si and Ge induced by 100 keV Ar⁺ ion beam: a comparative study

• Indra Sulania,
• Harpreet Sondhi,
• Tanuj Kumar,
• Sunil Ojha,
• G R Umapathy,
• Ambuj Mishra,
• Ambuj Tripathi,
• Richa Krishna,
• Devesh Kumar Avasthi and
• Yogendra Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 367–375, doi:10.3762/bjnano.15.33

• of the electron beam rather than the range of the ion beam. The d-spacing found for Si was 0.31 nm and for Ge was 0.34 nm. The SAED pattern clearly shows a good diffraction pattern for Ge indicating that crystallinity remained intact for Ge even after irradiation at a higher ion fluence than that

Controllable physicochemical properties of WO_x thin films grown under glancing angle

• Rupam Mandal,
• Aparajita Mandal,
• Alapan Dutta,
• Rengasamy Sivakumar,
• Sanjeev Kumar Srivastava and
• Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

• films was studied in cross-section view mode using a field-emission scanning electron microscope (FESEM) (Carl Zeiss). The samples were cleaved using a diamond cutter and placed on the SEM sample holder with the cross-sectional area facing the electron beam. All SEM images were captured using 5 keV

Design, fabrication, and characterization of kinetic-inductive force sensors for scanning probe applications

• August K. Roos,
• Ermes Scarano,
• Elisabet K. Arvidsson,
• Erik Holmgren and
• David B. Haviland

Beilstein J. Nanotechnol. 2024, 15, 242–255, doi:10.3762/bjnano.15.23

• the coupling to the transmission line used to measure the microwave resonance. A detailed description of our fabrication is presented, including information about the process parameters used for each layer. We also discuss the fabrication of sharp tips on the cantilever using focused electron beam

• expose with a dose of 450 mJ/cm2 using an MLA150 from Heidelberg Instruments. We develop the pattern in maD533s for roughly 45 s and then deposit 10 nm chromium and 40 nm of gold by electron-beam evaporation in an Auto306 from Edwards Vacuum. Lift-off in mrREM700 removes the resist mask, and the

• adhesion of the following 150 nm deposition of chromium with electron-beam evaporation in the Auto306 from Edwards. After the lift-off in mrREM700, we also strip the protective PMMA layer on the front side with AR600–71, and we clean the wafer in isopropanol (IPA). (d) Coarse circuit pattern. A layer of

Quantitative wear evaluation of tips based on sharp structures

• Ke Xu and
• Houwen Leng

Beilstein J. Nanotechnol. 2024, 15, 230–241, doi:10.3762/bjnano.15.22

• shown in Figure 6. The crest’s location in the plane view indicates potential tips of structures. Images of the AFM probes were acquired using a Thermo Fisher Scientific Quattro model scanning electron microscope system. The imaging parameters for the SEM were set to 20 kV electron beam voltage with a

• morphology to verify the reliability of the tip morphology determination based on TipCheck samples. The findings in Figure 9 show that as the number of scans increases during SEM observation, the tip diameter fluctuates, and the ETD rises. This observation suggests that a high-intensity electron beam scan

Ion beam processing of DNA origami nanostructures

• Leo Sala,
• Agnes Zerolová,
• Violaine Vizcaino,
• Alain Mery,
• Alicja Domaracka,
• Hermann Rothard,
• Philippe Boduch,
• Dominik Pinkas and
• Jaroslav Kocišek

Beilstein J. Nanotechnol. 2024, 15, 207–214, doi:10.3762/bjnano.15.20

• widths of 137 ± 3 nm from rim to rim and depths of ∼41 ± 1 nm from the average surface level to the bottom of the trench, as measured ex situ in AFM. The irradiation was done in vacuum (∼10−7 mbar) and at ambient temperature. The default configuration of the sample stage is perpendicular to the electron

• beam of the SEM component; hence, for irradiation, the sample is tilted at 55° through the motorized compucentric stage from the default configuration to be exactly perpendicular to the ion beam. Results and Discussion Fe beam irradiation in vacuum Dry DNA origami nanotriangles deposited on Si

Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO₂ substrates

• Aleksandra Szkudlarek,
• Jan M. Michalik,
• Inés Serrano-Esparza,
• Zdeněk Nováček,
• Veronika Novotná,
• Piotr Ozga,
• Czesław Kapusta and
• José María De Teresa

Beilstein J. Nanotechnol. 2024, 15, 190–198, doi:10.3762/bjnano.15.18

• processes using the so-called focused electron-beam-induced etching (FEBIE), with a spatial resolution of ten nanometers. Nanopatterning graphene with such a method in one single step and without using a physical mask or resist is a very appealing approach. During the process, on top of graphene

• nanopatterning, we have found significant morphological changes induced in the SiO2 substrate even at low electron dose values (<8 nC/μm2). We demonstrate that graphene etching and topographical changes in SiO2 substrates can be controlled via electron beam parameters such as dwell time and dose. Keywords

• shape control are very limited in those cases. Conventional electron beam lithography (EBL) reaches the resolution of a few nanometers. However, it leaves residual resists on the surface [9], which strongly affects electrical transport properties [10]. A similar high resolution can be achieved with e

Measurements of dichroic bow-tie antenna arrays with integrated cold-electron bolometers using YBCO oscillators

• Leonid S. Revin,
• Dmitry A. Pimanov,
• Alexander V. Chiginev,
• Anton V. Blagodatkin,
• Viktor O. Zbrozhek,
• Andrey V. Samartsev,
• Anastasia N. Orlova,
• Dmitry V. Masterov,
• Alexey E. Parafin,
• Victoria Yu. Safonova,
• Anna V. Gordeeva,
• Andrey L. Pankratov,
• Leonid S. Kuzmin,
• Anatolie S. Sidorenko,
• Silvia Masi and
• Paolo de Bernardis

Beilstein J. Nanotechnol. 2024, 15, 26–36, doi:10.3762/bjnano.15.3

• for the 240 GHz channel is 34.8 GHz, and the maximum absorption occurs at a frequency of 239.6 GHz. Fabrication of samples of receiving systems with CEBs The samples and the sample blanks with electronic lithography, ready for electron beam evaporation, were fabricated at the Chalmers University of

• have resulted in jagged edges or a raised edge of the plating after lift-off, which in turn would have prevented thin electron beam resist from being deposited in the next operation. Therefore, LOR3A and S1805 photoresists were used. After the development, a layer of Ti/Au/Pd with thicknesses of 10/100

• /20 nm was deposited with an electron-beam evaporation machine. After lift-off, a double layer of MMA and ARP electron resist was deposited, which is necessary to form an aluminum oxide dielectric layer without breaking the vacuum. Then the electron lithography was made, but the resist was not

TEM sample preparation of lithographically patterned permalloy nanostructures on silicon nitride membranes

• Joshua Williams,
• Michael I. Faley,
• Joseph Vimal Vas,
• Peng-Han Lu and
• Rafal E. Dunin-Borkowski

Beilstein J. Nanotechnol. 2024, 15, 1–12, doi:10.3762/bjnano.15.1

• method to form an undercut structure that guarantees a clean lift-off procedure. The second approach used dry etching with an Ar beam to etch a thin Py film, while an electron-beam-patterned negative resist mask kept the desired structure. In the third process, nanostencils (shadow masks) with

• information down to the nanometer/atomic scale. However, the corresponding samples need to be prepared on electron-beam-transparent membranes, which are very fragile and can easily break during standard lithography procedures. Although a lift-off approach has been demonstrated [20], alternative methods may be

• structure. The resist was patterned using an electron beam, which offers higher resolution than other sources (e.g., UV light) because of the smaller wavelength of electrons. Since the use of an ultrasonic bath will destroy the free-standing membrane, the undercut must be deliberately made larger to ensure

A combined gas-phase dissociative ionization, dissociative electron attachment and deposition study on the potential FEBID precursor [Au(CH₃)₂Cl]₂

• Elif Bilgilisoy,
• Ali Kamali,
• Thomas Xaver Gentner,
• Gerd Ballmann,
• Sjoerd Harder,
• Hans-Peter Steinrück,
• Hubertus Marbach and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2023, 14, 1178–1199, doi:10.3762/bjnano.14.98

• Iceland, Dunhagi 3, 107 Reykjavík, Iceland Inorganic and Organometallic Chemistry, Universität Erlangen-Nürnberg, 91058 Erlangen, Germany Carl Zeiss SMT GmbH, 64380 Roßdorf, Germany 10.3762/bjnano.14.98 Abstract Motivated by the potential of focused-electron-beam-induced deposition (FEBID) in the

• yielded deposits with high gold content, ranging from 45 to 61 atom % depending on the beam current and on the cleanliness of the substrates surface. Keywords: dissociative electron attachment; dissociative ionization; focused-electron-beam-induced deposition (FEBID); gold deposit; low-energy electrons

• nanostructures are critical for the enhancement of absorption and controlled scattering of light [10]. Focused-electron-beam-induced deposition (FEBID) is a direct writing method for controlled deposition/fabrication of nanostructures on either flat or nonflat surfaces. It offers excellent shape control and thus

Hierarchically patterned polyurethane microgrooves featuring nanopillars or nanoholes for neurite elongation and alignment

• Lester Uy Vinzons,
• Guo-Chung Dong and
• Shu-Ping Lin

Beilstein J. Nanotechnol. 2023, 14, 1157–1168, doi:10.3762/bjnano.14.96

• fabrication. For instance, traditional techniques, such as electron-beam lithography, laser writing, and cleanroom photolithography, have flexibility in design but require costly equipment [13][14]. Relatively cheaper techniques, such as anodization, electroplating, and electrospinning, are limited by the

A multi-resistance wide-range calibration sample for conductive probe atomic force microscopy measurements

• François Piquemal,
• Khaled Kaja,
• Pascal Chrétien,
• José Morán-Meza,
• Frédéric Houzé,
• Christian Ulysse and
• Abdelmounaim Harouri

Beilstein J. Nanotechnol. 2023, 14, 1141–1148, doi:10.3762/bjnano.14.94

• standard photolithography, using a mask aligner (MA6, Karl Suss, Germany), and conventional deposition techniques. Following a resist (about 1 µm thick) development process, a 2 inch diameter wafer was placed in a vacuum chamber for electron beam deposition of a 200 nm thick titanium/gold layer

Fragmentation of metal(II) bis(acetylacetonate) complexes induced by slow electrons

• Janina Kopyra and
• Hassan Abdoul-Carime

Beilstein J. Nanotechnol. 2023, 14, 980–987, doi:10.3762/bjnano.14.81

• electron beam with an organometallic target (e.g., focused electron beam-induced deposition, FEBID) is a promising technique for direct 3D deposition of high-purity materials with minimum residual carbon in the product on the surface [4][5]. The FEBID precursor molecules adsorb and diffuse on the surface

• , where they are decomposed under the focused kiloelectronvolt electron beam. In this technique, both the primary ionizing particles and the secondary species (e.g., ballistic electrons) with energies below 20 eV [6][7] lead to the decomposition of the molecules and the subsequent surface modification

• of an electron source, an oven, and a quadrupole mass analyzer (QMA). The components are housed in a UHV chamber at a base pressure of around 2 × 10−8 mbar. A well-defined electron beam generated from a trochoidal electron monochromator (resolution approx. 210 meV FWHM), orthogonally intersects an

N-Heterocyclic carbene-based gold etchants

• Robert B. Chevalier,
• Justin Pantano,
• Matthew K. Kiesewetter and
• Jason R. Dwyer

Beilstein J. Nanotechnol. 2023, 14, 865–871, doi:10.3762/bjnano.14.71

• Information File 1. Gold-coated glass slides were purchased from Electron Microscopy Sciences (71892-05, Hatfield, PA, USA). The films were 50 nm of gold deposited by electron beam evaporation onto a 2–7 nm chromium adhesion layer. Slides were cut into ca. 1 × 1 cm2 tokens and immersed in 2 mL of the relevant

Carboxylic acids and light interact to affect nanoceria stability and dissolution in acidic aqueous environments

• Matthew L. Hancock,
• Eric A. Grulke and
• Robert A. Yokel

Beilstein J. Nanotechnol. 2023, 14, 762–780, doi:10.3762/bjnano.14.63

• ). Instead, approximately 5 nm features were observed at weeks 2, 4, and 8. These features were not stable and were altered by the high-intensity electron beam, confirming that they are not cerium oxides (Figure S2, Supporting Information File 1). Allen et al. [54] showed similar results and considered how

Observation of multiple bulk bound states in the continuum modes in a photonic crystal cavity

• Rui Chen,
• Yi Zheng,
• Xingyu Huang,
• Qiaoling Lin,
• Chaochao Ye,
• Meng Xiong,
• Martijn Wubs,
• Yungui Ma,
• Minhao Pu and
• Sanshui Xiao

Beilstein J. Nanotechnol. 2023, 14, 544–551, doi:10.3762/bjnano.14.45

• To verify the multiple modes in the bandgap mirror-assisted BIC cavity, several samples with different sidelengths (w) were fabricated by electron beam lithography (EBL) and inductively coupled plasma (ICP) etching on 500 nm thick AlGaAs on a sapphire wafer. The parameter sweep of w around 400 nm was

A mid-infrared focusing grating coupler with a single circular arc element based on germanium on silicon

• Xiaojun Zhu,
• Shuai Li,
• Ang Sun,
• Yongquan Pan,
• Wen Liu,
• Yue Wu,
• Guoan Zhang and
• Yuechun Shi

Beilstein J. Nanotechnol. 2023, 14, 478–484, doi:10.3762/bjnano.14.38

• than that of a MIR grating coupler with conventional tapered linear gratings (5.49%). Because the proposed structure is geometrically simple, it is easy to implement experimentally. The proposed MIR FGC based on Ge-on-Si can be fabricated by electron beam lithography (EBL) and inductively coupled

Formation of nanoflowers: Au and Ni silicide cores surrounded by SiO_x branches

• Feitao Li,
• Siyao Wan,
• Dong Wang and
• Peter Schaaf

Beilstein J. Nanotechnol. 2023, 14, 133–140, doi:10.3762/bjnano.14.14

• small pieces were ready for thin film deposition. Metallic bilayers of Au and Ni of three different thickness ratios and a total thickness of 20 nm were deposited onto the SiO2/Si substrate by electron beam evaporation (CS400ES, VON ARDENNE) at a working pressure of 1 × 10−6 mbar. The Au layer was

Gap-directed chemical lift-off lithographic nanoarchitectonics for arbitrary sub-micrometer patterning

• Chang-Ming Wang,
• Hong-Sheng Chan,
• Chia-Li Liao,
• Che-Wei Chang and
• Wei-Ssu Liao

Beilstein J. Nanotechnol. 2023, 14, 34–44, doi:10.3762/bjnano.14.4

• limit of commercially available techniques down to the 10 nm scale in the form of extreme ultraviolet lithography [1][2], though equipment cost and energy consumption substantially increase with smaller desired feature dimension. On the contrary, direct-write methods like electron beam lithography can

Double-layer symmetric gratings with bound states in the continuum for dual-band high-Q optical sensing

• Chaoying Shi,
• Jinhua Hu,
• Xiuhong Liu,
• Junfang Liang,
• Jijun Zhao,
• Haiyan Han and
• Qiaofen Zhu

Beilstein J. Nanotechnol. 2022, 13, 1408–1417, doi:10.3762/bjnano.13.116

• structure can be fabricated as follows [56]. At first, the gratings of the bottom layer are fabricated using electron beam lithography (EBL) and reactive ion etching (RIE) on a SOI chip with a single crystalline silicon device layer and a buried oxide (BOX), where this SOI chip serves as the receiving

Roll-to-roll fabrication of superhydrophobic pads covered with nanofur for the efficient clean-up of oil spills

• Patrick Weiser,
• Robin Kietz,
• Marc Schneider,
• Matthias Worgull and
• Hendrik Hölscher

Beilstein J. Nanotechnol. 2022, 13, 1228–1239, doi:10.3762/bjnano.13.102

• , too [7]. Multiple techniques exist to prepare self-cleaning surfaces. Direct laser writing and electron beam lithography have been employed successfully to create superhydrophobic surfaces. However, due to low writing speeds these approaches are not viable for surface areas larger than a few square

Effects of focused electron beam irradiation parameters on direct nanostructure formation on Ag surfaces

• Jānis Sniķeris,
• Vjačeslavs Gerbreders,
• Andrejs Bulanovs and
• Ēriks Sļedevskis

Beilstein J. Nanotechnol. 2022, 13, 1004–1010, doi:10.3762/bjnano.13.87

• plasmonics, due to their ability to absorb or emit light at frequencies which depend on their size and shape. It was recently shown that irradiation by a focused electron beam can promote the growth of nanostructures on metal surfaces and the height of these structures depends on the duration of the

• irradiation and the material of the surface. However, the effects on growth dynamics of numerous irradiation parameters, such as beam current or angle of incidence, have not yet been studied in detail. We explore the effects of focusing, angle of incidence, and current of the electron beam on the size and

• surfaces undergoing irradiation by a focused electron beam. Keywords: atomic force microscopy; electron beam; lithography; nanostructure; silver; sputtering; surface; Introduction Metallic nanostructures have various uses, including in nano-electro-mechanical systems [1], plasmonic biosensors [2], and

DNA aptamer selection and construction of an aptasensor based on graphene FETs for Zika virus NS1 protein detection

• Nathalie B. F. Almeida,
• Thiago A. S. L. Sousa,
• Viviane C. F. Santos,
• Camila M. S. Lacerda,
• Thais G. Silva,
• Rafaella F. Q. Grenfell,
• Flavio Plentz and
• Antero S. R. Andrade

Beilstein J. Nanotechnol. 2022, 13, 873–881, doi:10.3762/bjnano.13.78

• previously described by our group elsewhere [24]. The dimensions of the sensing region (100 μm × 100 μm) were defined by O2 plasma etching. The source and drain electrodes were fabricated by electron-beam evaporation of 2 nm/100 nm of Ti/Au, and we covered the metal contacts with a 10 μm thick passivation